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All the 3D NAND manufacturers are continuing to increase the number of vertical 3D NAND gates with their own technology innovations such as HAR 1-stack VC, BiCS, CuA, and PUC. Many innovative changes and challenges are there on process integration, design architecture and cell operation.
For the emerging memory (EM) including STT-MRAM, XPoint, PCRAM and ReRAM (CBRAM), many of the memory players and foundries are eager to develop EM for higher speed, low power, and almost unlimited retention/endurance operation.
A recent emerging memory technology details and products from major players will be updated and discussed.
- Vendor:
- Flash Memory Summit
- Posted:
- Mar 15, 2021
- Published:
- Dec 16, 2020
- Format:
- Type:
- Presentation
